Samsung 970 EVO Plus MZ-V7S1T0BWsolid state drive - 1 TB - PCI Express 3.0 x4 (NVMe)

€ 159,95  ex VAT
€ 193,54  inc VAT

Stock

656 available
Type: Solid state drive - internal - TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller
Capacity: 1 TB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES

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  • Insight #: 0008712502
  • Mfr. #:

    MZ-V7S1T0BW

  • UNSPSC: 43201830

Overview

Product Description

The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing.

The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 57% faster than the 970 EVO. The latest V-NAND technology - which brings greater NAND performance and higher power efficiency - along with optimized firmware, a Phoenix controller, and Intelligent TurboWrite boost speed.

Specification

Samsung 970 EVO Plus MZ-V7S1T0BW - solid state drive - 1 TB - PCI Express 3.0 x4 (NVMe)
Type Solid state drive - internal - TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller
Capacity 1 TB
Hardware Encryption Yes
Encryption Algorithm 256-bit AES
NAND Flash Memory Type Triple-level cell (TLC)
Form Factor M.2 2280
Interface PCI Express 3.0 x4 (NVMe)
Buffer Size 1 GB
Features TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Dimensions (WxDxH) 22.15 mm x 80.15 mm x 2.38 mm
Weight 8 g
Manufacturer Warranty 5-year warranty


Extended Specification

General
Buffer Size 1 GB
Capacity 1 TB
Depth 80.15 mm
Device Type Solid state drive - internal
Encryption Algorithm 256-bit AES
Features TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Form Factor M.2 2280
Hardware Encryption Yes
Height 2.38 mm
Interface PCI Express 3.0 x4 (NVMe)
NAND Flash Memory Type Triple-level cell (TLC)
Weight 8 g
Width 22.15 mm
Environmental Parameters
Max Operating Temperature 70 °C
Min Operating Temperature 0 °C
Shock Tolerance (operating) 1500 g @ 0.5 ms half-sine
Expansion & Connectivity
Compatible Bay M.2 2280
Interfaces PCI Express 3.0 x4 (NVMe) - M.2 Card
Manufacturer Warranty
Service & Support Limited warranty - 5 years
Miscellaneous
Compliant Standards IEEE 1667
Performance
4KB Random Read 19000 IOPS
4KB Random Write 60000 IOPS
Internal Data Rate 3500 MBps (read) / 3300 MBps (write)
Maximum 4KB Random Read 600000 IOPS
Maximum 4KB Random Write 550000 IOPS
SSD Endurance 600 TB
Power
Power Consumption 6 Watt (average) ¦ 9 Watt (maximum) ¦ 30 mW (idle max)
Reliability
MTBF 1,500,000 hours

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